11/18/97 IRL3302 preliminary hexfet ? power mosfet pd 9.1696a these hexfet power mosfets were designed specifically to meet the demands of cpu core dc-dc converters in the pc environment. advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 4.5v 39 i d @ t c = 100c continuous drain current, v gs @ 4.5v 25 a i dm pulsed drain current ? 160 p d @t c = 25c power dissipation 57 w linear derating factor 0.45 w/c v gs gate-to-source voltage 10 v v gsm gate-to-source voltage 14 v (start up transient, tp = 100s) e as single pulse avalanche energy ? 130 mj i ar avalanche current ? 23 a e ar repetitive avalanche energy ? 5.7 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 2.2 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 20v r ds(on) = 0.020 w i d = 39a t o -22 0 ab description l advanced process technology l optimized for 4.5v gate drive l ideal for cpu core dc-dc converters l 150c operating temperature l fast switching
IRL3302 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.022 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.023 v gs = 4.5v, i d = 23a ? CCC CCC 0.020 w v gs = 7.0v, i d = 23a ? v gs(th) gate threshold voltage 0.70 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 21 CCC CCC s v ds = 10v, i d = 23a CCC CCC 25 a v ds = 20v, v gs = 0v CCC CCC 250 v ds = 10v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 10v gate-to-source reverse leakage CCC CCC -100 v gs = -10v q g total gate charge CCC CCC 31 i d = 23a q gs gate-to-source charge CCC CCC 5.7 nc v ds = 16v q gd gate-to-drain ("miller") charge CCC CCC 13 v gs = 4.5v, see fig. 6 ? t d(on) turn-on delay time CCC 7.2 CCC v dd = 10v t r rise time CCC 110 CCC ns i d = 23a t d(off) turn-off delay time CCC 41 CCC r g = 9.5 w , v gs = 4.5v t f fall time CCC 89 CCC r d = 2.4 w , ? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 1300 CCC v gs = 0v c oss output capacitance CCC 520 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 190 CCC ? = 1.0mhz, see fig. 5 s d g ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 23a, di/dt 97a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 0.49mh r g = 25 w , i as = 23a. ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 23a, v gs = 0v ? t rr reverse recovery time CCC 62 94 ns t j = 25c, i f = 23a q rr reverse recovery charge CCC 110 160 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 39 160 a electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss nh l s internal source inductance CCC 7.5 CCC l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current
IRL3302 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 39a 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.0v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.0v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 2 3 4 5 6 7 8 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j vgs top 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v vgs top 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v
IRL3302 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 2400 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 23a v = 16v ds 1 10 100 1000 0.5 1.0 1.5 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRL3302 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 10 20 30 40 t , case temperature ( c) i , drain current (a) c d 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 15a 23a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRL3302 0 10 20 30 40 0.016 0.017 0.018 0.019 0.020 0.021 0.022 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 7.0v vgs = 4.5v fig 12. on-resistance vs. drain current fig 13. on-resistance vs. gate voltage ( w ) 0.014 0.015 0.016 0.017 0.018 0.019 0.020 45678910 a gs v , gate-to-source volta g e ( v ) i = 39a d r ds(on), drain-to-source on resistance ( w )
IRL3302 lead assignments 1 - g a te 2 - dr a in 3 - source 4 - dr a in - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 c o n tr o lling d im e n s io n : inc h 4 h e a ts in k & le a d m e a s u r e m e n t s d o n ot include burrs. part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo go example : this is an irf1010 w ith assembly lo t c o de 9b1m assembly lo t co d e date code (yyw w ) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/97
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